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APTGL475U120DAG
Single switch with Series diode Trench + Field Stop IGBT4
EK E C
VCES = 1200V IC = 475A @ Tc = 100C
Application * Zero Current Switching resonant mode Features * Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses * * * * Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration AlN substrate for improved thermal performance
G
CK
E CK
C
EK G
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Low profile * RoHS Compliant
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25C Tc = 100C Tc = 25C Tc = 25C Tj = 150C Max ratings 1200 610 475 800 20 2307 800A @ 1150V Unit V A V W
May, 2009 1-5 APTGL475U120DAG - Rev 1
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGL475U120DAG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) VGE(th) Collector Emitter Saturation Voltage Gate Threshold Voltage Test Conditions VGE = 0V ; VCE = 1200V VGE =15V Tj = 25C IC = 400A Tj = 150C VGE = VCE, IC = 10 mA Min Typ 1.8 2.2 5.8 Max 4 2.2 6.5 Unit mA V V
5
Dynamic Characteristics
Symbol Characteristic Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff ISC Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short circuit current Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=15V Inductive Switching (25C) VGE = 15V VCE = 600V IC = 400A RG = 1.8 Inductive Switching (150C) VGE = 15V VCE = 600V IC = 400A RG = 1.8 TJ = 25C VGE = 15V VCE = 600V TJ = 150C IC = 400A TJ = 25C RG = 1.8 TJ = 150C VGE15V ; VCC=900V tp10s ; Tj=150C Min Typ 24.6 1.62 1.38 3.4 160 30 340 80 170 40 450 170 20.8 42 22 37.2 2000 ns Max Unit nF C
ns
mJ mJ A
Series diode ratings and characteristics
Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 360A IF = 720A IF = 360A IF = 360A VR = 800V di/dt = 1200A/s Test Conditions
VR=1200V
Min 1200 Tj = 25C Tj = 125C
Tj = 90C
Typ
Max 400 2000
Unit V A A
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
Tj = 25C Tj = 125C Tj = 25C Tj = 125C
265 350 3.3 17.3
ns C
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2-5
APTGL475U120DAG - Rev 1
May, 2009
Tj = 125C
360 2.5 3 1.8
3 V
APTGL475U120DAG
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink For teminals M6 M5 IGBT Series diode 2500 -40 -40 -40 3 2 Min Typ Max 0.065 0.13 175 125 100 5 3.5 280 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
Typical IGBT Performance Curve
Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 80 70 60 50 40 30 20 10 0 0 120 240 360 480 600 IC (A)
Hard switching ZVS ZCS VCE=600V D=50% .8 R G=1 50C T J=1 Tc=75C
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3-5
APTGL475U120DAG - Rev 1
May, 2009
APTGL475U120DAG
800 Output Characteristics (VGE=15V) Output Characteristics 800 TJ = 150C 600 IC (A)
TJ=25C VGE=19V VGE=15V
600 IC (A)
TJ=150C
400
400
VGE=9V
200
200
0 0 1 2 VCE (V) Transfert Characteristics
TJ=25C
0 3 4 0 1 2 VCE (V) 3 4
800
160 140 120 E (mJ) 100 80 60
Energy losses vs Collector Current
VCE = 600V VGE = 15V RG = 1.8 TJ = 150C
600 IC (A)
Eon
400
TJ=150C
Eoff
200
40 20
0 5 6 7 8 9 VGE (V) Switching Energy Losses vs Gate Resistance 80 70 60 E (mJ) 50 40 30 20 0 2.5 5 7.5 Gate Resistance (ohms) 10
Eoff
0 10 11 12 13 0 200 400 IC (A) Reverse Bias Safe Operating Area 960
VCE = 600V VGE =15V IC = 400A TJ = 150C
Eon
600
800
800 640 IC (A) 480 320 160 0 0 300 600 900 VCE (V) 1200 1500
VGE=15V TJ=150C RG=1.8
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.07 Thermal Impedance (C/W) 0.06 0.05 0.04 0.03 0.02 0.01
0.3 0.1 0.9
IGBT
0.7 0.5
Single Pulse
0.05 0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4-5
APTGL475U120DAG - Rev 1
May, 2009
APTGL475U120DAG
Typical Series diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.15 Thermal Impedance (C/W) 0.12 0.09
0.5 0.9 0.7
0.06
0.3
0.03 0 0.00001
0.1 0.05
Single Pulse 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) 900 IF, Forward Current (A) 750
TJ=125C
Trr vs. Current Rate of Charge
400
TJ=125C VR=800V
600 450 300 150 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VF, Anode to Cathode Voltage (V)
TJ=25C
300
720 A
200
360 A
100 0 0
180 A
1200 2400 3600 4800 6000 7200
-diF/dt (A/s) IRRM vs. Current Rate of Charge
QRR, Reverse Recovery Charge (C)
QRR vs. Current Rate Charge 36 30 24 18 12 6 0
180 A TJ=125C VR=800V
IRRM, Reverse Recovery Current (A)
42
300 240 180 120 60 0 0 1200 2400 3600 4800 6000 7200
-diF/dt (A/s)
TJ=125C VR=800V 720 A 360 A 180 A
720 A
360 A
0
1200 2400 3600 4800 6000 7200 -diF/dt (A/s)
Capacitance vs. Reverse Voltage
2400
Max. Average Forward Current vs. Case Temp. 600 480 IF(AV) (A) 360 240
Duty Cycle = 0.5 TJ=175C
C, Capacitance (pF)
1800
1200
600
0 1 10 100 VR, Reverse Voltage (V) 1000
0 25 50 75 100 125 150 175 Case Temperature (C)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGL475U120DAG - Rev 1
May, 2009
120

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